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Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge

G. Rossbach, M. Feneberg, M. Röppischer, C. Werner, N. Esser, C. Cobet, T. Meisch, K. Thonke, A. Dadgar, J. Bläsing, A. Krost, R. Goldhahn

Veröffentlicht:

2011, Physical Review B

The optical properties around the absorption edge of high-quality wurtzite c-plane AlN layers are investigated by spectroscopic ellipsometry focusing on the anisotropy of the optical response. The spectral dependence of dielectric function shows a strong contribution of exciton-phonon coupling superimposed to the exciton continuum. Crystal field splitting and spin-orbit coupling energies are found to be Δcf=−212 meV and Δso=16 meV, respectively. These values are accessible because our data allow extraction of the transition energies of excitons with holes from all three highest valence bands. Energy positions are cross-checked by photoluminescence measurements. As the samples are grown on different substrates and exhibit varying biaxial strain determined by high resolution x-ray diffraction, we are also able to determine the deformation potentials a−D1=−6.9 eV, a−D2=−15.2 eV, D3=8.3 eV, and D4=−4.15 eV for AlN.