{"id":2668,"date":"2011-03-01T14:36:00","date_gmt":"2011-03-01T13:36:00","guid":{"rendered":"https:\/\/forschungsnetzwerk-chim.de\/?post_type=publikationen&#038;p=2668"},"modified":"2024-01-26T12:02:16","modified_gmt":"2024-01-26T11:02:16","slug":"electrical-properties-of-alxga1-xn-gan-heterostructures-with-low-al-content","status":"publish","type":"publikationen","link":"https:\/\/forschungsnetzwerk-chim.de\/en\/publications\/electrical-properties-of-alxga1-xn-gan-heterostructures-with-low-al-content\/","title":{"rendered":"Electrical properties of AlxGa1-xN\/GaN heterostructures with low Al content"},"content":{"rendered":"\n<p>Electrical properties of Al<sub>x<\/sub>Ga<sub>1\u2212x<\/sub>N\/GaN heterostructures with an Al content below 15% and carrier concentrations as low as 1.0\u2009\u00d7\u200910<sup>12<\/sup>\u00a0cm<sup>\u22122<\/sup>\u00a0were investigated by Hall effect measurements and capacitance\u2013voltage profiling. The nominally undoped GaN capped structures were grown by low-pressure metal-organic vapor-phase epitaxy. The threshold voltage of transistor devices follows the trend already found for high Al-containing structures, which are described by a model indicating a surface potential independent of Al content. Photoreflectance spectroscopy confirms the results for as-grown heterostructures. The Hall effect measured on the as-grown samples, however, shows a stronger decrease in carrier concentration than expected from the effect of polarization and constant surface potential. In contrast, Hall effect data determined on samples with Ni Schottky contacts and capacitance-voltage profiling on as-grown samples yield the expected behavior, with surface potentials of 0.86 eV and 0.94 eV, respectively. The inconsistency is eliminated by describing the results of the Hall effect on as-grown samples by a two-carrier model. Self-consistent Schr\u00f6dinger\u2013Poisson calculations support these considerations if we take into account a transition range at the Al<sub>x<\/sub>Ga<sub>1\u2212x<\/sub>N\/GaN interface.<\/p>\n","protected":false},"excerpt":{"rendered":"<p><b>Publication:<\/b> 2011<\/p>\n","protected":false},"featured_media":0,"template":"","meta":{"_acf_changed":false},"beteiligte":[],"class_list":["post-2668","publikationen","type-publikationen","status-publish","hentry","publikationen_category-physical-chemistry"],"acf":[],"_links":{"self":[{"href":"https:\/\/forschungsnetzwerk-chim.de\/en\/wp-json\/wp\/v2\/publikationen\/2668","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/forschungsnetzwerk-chim.de\/en\/wp-json\/wp\/v2\/publikationen"}],"about":[{"href":"https:\/\/forschungsnetzwerk-chim.de\/en\/wp-json\/wp\/v2\/types\/publikationen"}],"wp:attachment":[{"href":"https:\/\/forschungsnetzwerk-chim.de\/en\/wp-json\/wp\/v2\/media?parent=2668"}],"wp:term":[{"taxonomy":"beteiligte","embeddable":true,"href":"https:\/\/forschungsnetzwerk-chim.de\/en\/wp-json\/wp\/v2\/beteiligte?post=2668"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}